Diffusion limited dark current in as-implanted (Hg, Cd)Te photodiodes

High detector performance of (Hg, Cd)Te photodiodes requires small dark currents in the structures. For the first time we have observed as-implanted (Hg, Cd)Te photodiodes offering r 0 A products near to theoretical limits. The pn -junction was obtained by ion implantation through a Al 2 O 3 passivation layer.