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Novel electronic properties of two-dimensional AsxSby alloys studied using DFT
- Source :
- Journal of Materials Chemistry C. 6:2854-2861
- Publication Year :
- 2018
- Publisher :
- Royal Society of Chemistry (RSC), 2018.
-
Abstract
- The predictions of a new series of two-dimensional (2D) materials, namely, arsenene and antimonene have enriched the field of nano-electronic devices-fabrication. However, the indirect band gap character of the pristine structures slows down the pace of their practical applications. Herein, we prepared and studied novel monolayer AsxSby alloys with excellent stabilities (where x and y denote the atomic ratio of As and Sb elements and x + y = 16). The results indicate that some of the components possess direct band gaps. Moreover, the low effective masses (lower than 0.2m0, where m0 is the static electron mass) of the alloys, which enhanced the device efficiency, were also identified. In particular, α-phase AsxSby (5 ≤ y ≤ 9) harbors effective masses even lower than phosphorene. Our predictions not only inject new vigor into 2D alloys, enriching the candidate materials available in this field, but also highlight the potential of these alloys as fascinating materials for future non-electronic devices.
- Subjects :
- Materials science
Field (physics)
Band gap
02 engineering and technology
General Chemistry
Electron
010402 general chemistry
021001 nanoscience & nanotechnology
01 natural sciences
0104 chemical sciences
Phosphorene
chemistry.chemical_compound
chemistry
Chemical physics
Monolayer
Materials Chemistry
Atomic ratio
Direct and indirect band gaps
0210 nano-technology
Electronic properties
Subjects
Details
- ISSN :
- 20507534 and 20507526
- Volume :
- 6
- Database :
- OpenAIRE
- Journal :
- Journal of Materials Chemistry C
- Accession number :
- edsair.doi...........e2eec11af7eefabd5fb17c30cddb02f5