Chapter 9 Silicon Carbide Junction Devices

Publisher Summary Silicon carbide (SiC) is perhaps the oldest semiconductor. Although in the last fifty years considerable use has been made of its abrasive properties, only in the past fifteen years has its potentialities as a semiconductor been exploited. The chapter discusses that Sic devices have distinct properties that lead to specific applications: they are operable up to 500oC, they have enhanced radiation resistance, and certain particular characteristics (example, band gap) lead to specific device applications. Applications in these areas determine the final utilization of Sic devices. The future development of Sic devices probably depends more on engineering perseverence than on semiconductor physics breakthrough.. The sophisticated active devices and integrated circuits now being prepared from silicon will be prepared from Sic when suitable crystals are available and the fabrication techniques are refined.