Investigation of InP/InGaAs superlattice-emitter resonant tunneling bipolar transistor at room temperature

In this paper, a new InP/InGaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT) has been successfully fabricated and demonstrated. The employing of a thin n-InGaAs emitter between InP/InGaAs superlattice and p+-InGaAs base helps to lower potential spike and reduce neutral-emitter recombination current, simultaneously. Furthermore, InP/InGaAs superlattice resulted from tunneling injection can reduce the spread of thermal distribution and non-radiative recombination cross-section. Experimentally, the studied device exhibits a common-emitter current gain as high as 670 and low collector–emitter offset voltage of 60 mV at room temperature. To our knowledge, the device exhibits the largest current gain when compared to the previously reported SE-RTBTs.