Soft-x-ray photoemission study of Mn/GaP(100) interface

The interface formation and electronic structures of the Mn/GaP(100) interface are studied with synchrotron radiation photoemission. At the early stage of Mn deposition, Mn covers the whole GaP(100) surface. With the increase of coverage, Ga atoms can be exchanged by Mn atoms and diffuse into the Mn overlayer. However, P atoms remain always near the interfacial region. A significant difference of the electronic structures is observed between the ultra-thin and the thick Mn films. The explanations for this are given in the text.