Characterization of Copper Electromigration Dependence on Selective Chemical Vapor Deposited Cobalt Capping Layer Thickness

Authors :: Daniel C. Edelstein
Ping-Chuan Wang
P Ma
S Lee
C.-C. Yang
J AuBuchon
Frieder H. Baumann
Source :: IEEE Electron Device Letters. 32:560-562
Publication Year :: 2011
Publisher :: Institute of Electrical and Electronics Engineers (IEEE), 2011.
Abstract: Co films with various thicknesses were selectively deposited as Cu capping layers by chemical-vapor-deposition technique. Selectivity of the Co deposition between Cu and dielectric surfaces was improved by raising the deposition pressure. Degree of electromigration (EM) resistance enhancement was observed to be dependent on the deposited Co thickness. Compared to the no-Co control, significant EM lifetime enhancement was observed when the Co cap is thicker than 6 nm.

Subjects :: Materials science
Analytical chemistry
chemistry.chemical_element
Chemical vapor deposition
Dielectric
Electromigration
Copper
Layer thickness
Electronic, Optical and Magnetic Materials
Characterization (materials science)
chemistry
Electrical and Electronic Engineering
Selectivity
Cobalt

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