An electrical study of a thin film poly(o-methoxyaniline) field effect transitor

A field-effect transistor (FET) having poly(o-methoxyaniline) (POMA) as the active layer was built on a SiO 2 -Si substrate which acts as the gate. The POMA layer was deposited by spin coating on the substrate interdigitated with gold lines and which acts either as the source or drain contact. A tentative theoretical model based on the Schottky gold/polymer interface contact and on the electronic properties of the POMA film was developed to explain the characteristic behavior of the FET device.