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Conductive Layer Thickness Enhanced Lateral Photovoltaic Performances in the Cu(In, Ga)Se2-Based Multilayer Heterostructure
Conductive Layer Thickness Enhanced Lateral Photovoltaic Performances in the Cu(In, Ga)Se2-Based Multilayer Heterostructure
- Source :
- IEEE Transactions on Electron Devices. 66:3887-3890
- Publication Year :
- 2019
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2019.
-
Abstract
- For the photovoltaic effect (PE), the surface potential is suggested to be an adverse factor, and researchers usually try to increase the thickness of the conductive layer or the number of strip electrodes to avoid it. However, the potential can still not be eliminated. More importantly, the huge cost has to be paid, and the photovoltaic performances are largely reduced. While the drawback of potential in PE may become excellent merit in lateral PE (LPE) due to their different working mechanisms. Moreover, the decreasing thickness of the conductive layer may be inversely used as an efficient method to modulate the LPE performances. In this paper, the indium tin oxide (ITO) conductive layer thickness-dependent LPE responses are well studied in the copper indium gallium selenide (CIGS) heterostructure. The LPE response is significantly improved with ITO thickness decreasing from 150 to 10 nm, and the thickness-dependent enhancement is strongly dependent on the illumination intensity, especially in high illumination intensities, a nonmonotonic thickness dependence is obtained. In addition, it is found that the heterostructure exhibits an ultrafast response speed of ~14.5 $\mu$ s/~15.0 $\mu$ s, and what is more, the response time nearly remains constant without depending on the ITO thickness.
- Subjects :
- 010302 applied physics
Materials science
business.industry
Heterojunction
Photovoltaic effect
01 natural sciences
Copper indium gallium selenide solar cells
Electronic, Optical and Magnetic Materials
Indium tin oxide
chemistry.chemical_compound
chemistry
0103 physical sciences
Electrode
Optoelectronics
Electrical and Electronic Engineering
business
Layer (electronics)
Copper indium gallium selenide
Electrical conductor
Subjects
Details
- ISSN :
- 15579646 and 00189383
- Volume :
- 66
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Electron Devices
- Accession number :
- edsair.doi...........e16da65529d2e1e8cc7e546a68fc24dd
- Full Text :
- https://doi.org/10.1109/ted.2019.2928595