Low-Temperature Activation of Mg-Doped GaN with Pd Thin Films

The activation of metalorganic chemical vapor deposition (MOCVD)-grown Mg-doped GaN by N 2 annealing with thin Pd films has been investigated, p-type GaN with a hole concentration of 7 x 10 16 cm -3 has been obtained at an annealing temperature as low as 200 °C using this technique. Thermal desorption spectroscopy (TDS) measurements have revealed that hydrogen is effectively removed from the Mg-doped GaN layer by the use of the Pd film.