Halogen and Mercury Lamp Annealing of Cd‐Implanted GaAs

This paper reports capless annealing of Cd-implanted GaAs performed using a halogen and a mercury lamp, which emit infrared and ultraviolet rays, respectively. Sheet carrier concentrations depended on annealing time and the lamps. At the beginning of annealing, the implanted Cd was lost to a greater extent on the samples annealed by the mercury lamp than on the samples annealed by the halogen lamp. GaAs surfaces decomposed during prolonged annealing using both lamps. The carrier concentration with annealing was suppressed by the thermal decomposition of GaAs.