Development of Voltammetry-Based Techniques for Characterization of Porous Low-k/Cu Interconnect Integration Reliability

MLA

N. L. Michael, et al. “Development of Voltammetry-Based Techniques for Characterization of Porous Low-k/Cu Interconnect Integration Reliability.” ECS Transactions, vol. 35, Apr. 2011, pp. 757–71. EBSCOhost, https://doi.org/10.1149/1.3572318.

APA

N. L. Michael, Todd E. Ryan, Choong-Un Kim, Liang-Shan Chen, Young-Joon Park, Woong Ho Bang, & Sean W. King. (2011). Development of Voltammetry-Based Techniques for Characterization of Porous Low-k/Cu Interconnect Integration Reliability. ECS Transactions, 35, 757–771. https://doi.org/10.1149/1.3572318

Chicago

N. L. Michael, Todd E. Ryan, Choong-Un Kim, Liang-Shan Chen, Young-Joon Park, Woong Ho Bang, and Sean W. King. 2011. “Development of Voltammetry-Based Techniques for Characterization of Porous Low-k/Cu Interconnect Integration Reliability.” ECS Transactions 35 (April): 757–71. doi:10.1149/1.3572318.