Reentrant high-conduction state in CuIr2S4 under pressure

The results of electrical resistance and angle dispersive X-ray diffraction measurements at high pressures and ambient temperature on the chalcogenide spinel, CuIr 2 S 4 are reported. The resistance increases gradually and reaches around 12 GPa a value that is approximately forty times the initial value. Above 15 GPa, the resistance decreases up to 30 GPa and on further pressure increase tends to saturate at a value slightly above the ambient pressure value. Thus, the material exhibits a reentrant high conducting phase under pressure. The behaviour of the electrical resistance exhibits a close correlation with the structural evolution with pressure.