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Reentrant high-conduction state in CuIr2S4 under pressure
- Source :
- Solid State Communications. 142:369-372
- Publication Year :
- 2007
- Publisher :
- Elsevier BV, 2007.
-
Abstract
- The results of electrical resistance and angle dispersive X-ray diffraction measurements at high pressures and ambient temperature on the chalcogenide spinel, CuIr 2 S 4 are reported. The resistance increases gradually and reaches around 12 GPa a value that is approximately forty times the initial value. Above 15 GPa, the resistance decreases up to 30 GPa and on further pressure increase tends to saturate at a value slightly above the ambient pressure value. Thus, the material exhibits a reentrant high conducting phase under pressure. The behaviour of the electrical resistance exhibits a close correlation with the structural evolution with pressure.
- Subjects :
- Diffraction
Condensed matter physics
Chemistry
Chalcogenide
Spinel
macromolecular substances
General Chemistry
engineering.material
Condensed Matter Physics
Thermal conduction
Crystallography
chemistry.chemical_compound
stomatognathic system
Electrical resistance and conductance
Electrical resistivity and conductivity
Phase (matter)
Materials Chemistry
engineering
Ambient pressure
Subjects
Details
- ISSN :
- 00381098
- Volume :
- 142
- Database :
- OpenAIRE
- Journal :
- Solid State Communications
- Accession number :
- edsair.doi...........e0f323237e9854b9a1368391930b4bec