A comparison between atomic concentration profiles and defect density profiles in GaAs annealed after implantation with beryllium

Semi-insulating chromium-doped GaAs was implanted with 100 keV Be ions to fluences of 5 × 1013 and 1 × 1015 ions/cm2. Specimens were annealed at 800°C for thirty minutes. Beryllium atomic concentration profiles, as determined by secondary ion mass spectrometry (SIMS), were compared to the defect density profiles obtained from transmission electron stereomicroscopy techniques for the annealed samples. A major redistribution of Be was observed compared to the as-implanted distribution after annealing at the higher fluence, whereas only a slight redistribution of Be occurred for the lower fluence. A major difference in the defect density profiles was observed with the fluences used for this study in the region where the annealed specimens were compared. The distribution of defects throughout the implanted-annealed layer was examined in GaAs annealed after implantation with the higher fluence using sectioned specimens. The relationships between the atomic Be concentration profile, the defect density profile, and the distribution of some specific defects were compared in these sectioned layers. The distribution and size of defects appear to be directly influenced by the Be concentration and its associated implantation induced damage.