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Annealing induced oxidation and transformation of Zr thin film prepared by ion beam sputtering deposition
- Source :
- Materials Science and Engineering: A. :313-320
- Publication Year :
- 2007
- Publisher :
- Elsevier BV, 2007.
-
Abstract
- Nanocrystalline -Zr condensates deposited by ion beam sputtering on the NaCl (1 0 0) surfaces and then annealed at 100–750 ◦ C in air. The phases present were identified by transmission electron microscopy to be nanometer-size -Zr + ZrO, -Zr + ZrO + c-ZrO2, c-ZrO2, c- + t-ZrO2, t-ZrO2, and t- + m-ZrO2 phase assemblages with increasing annealing temperature. The ZrO2 showed strong { 100 } preferred orientation due to parallel epitaxy with NaCl (1 0 0) when annealed between 150 and 500 ◦ C in air. The c- and t-ZrO2 condensates also showed (1 1 1)-specific coalescence among themselves. The c- and/or t-ZrO2 formation can be accounted for by the small grain size, the presence of low-valence Zr cation and the lateral constraint of the neighboring grains. © 2006 Elsevier B.V. All rights reserved.
- Subjects :
- Zirconium
Materials science
Annealing (metallurgy)
Mechanical Engineering
Analytical chemistry
chemistry.chemical_element
Mineralogy
Condensed Matter Physics
Microstructure
Epitaxy
Nanocrystalline material
Grain size
chemistry
Mechanics of Materials
Transmission electron microscopy
General Materials Science
Thin film
Subjects
Details
- ISSN :
- 09215093
- Database :
- OpenAIRE
- Journal :
- Materials Science and Engineering: A
- Accession number :
- edsair.doi...........e0a604fc53f0524d8bd0034ae051d5ab
- Full Text :
- https://doi.org/10.1016/j.msea.2006.10.131