Light emission from reverse-biased Ge-doped GaAsp–njunctions†

The light emission from the reverse-biased GaAs p-n- junctions with substrate concentrations of 1.5 × 1017, 5 × 1017, 2.2 × 1018and 4.4 × 1018 cm-3 has been investigated. The omission spectra similar to that obtained for GaAs forward-biased junctions and the temperature dependence of the light emission intensity show that emission is due to the recombination of free electrons with holes on the acceptor level and occurs in the p side of the junction, as was observed at forward-biased diodes. Excess electrons are thrown in the conduction band of the p side of the junction by avalanche breakdown. The superlinearity of light intensity versus current characteristics is explained by the presence of non-radiative tunnel currents.