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Formation of Tetragonal InBi Clusters in InAsBi/InAs(100) Heterostructures Grown by Molecular Beam Epitaxy

Authors :
Danuta F. Mendes
Lara Dominguez
Faebian Bastiman
David González
John P. R. David
David L. Sales
D.F. Reyes
Robert D. Richards
Source :
Applied Physics Express. 6:112601
Publication Year :
2013
Publisher :
IOP Publishing, 2013.

Abstract

This work analyses the Bi incorporation in InAs1-xBix/InAs(100) epilayers grown by MBE through advanced transmission electron microscopy techniques. Samples grown from 350–400 °C resulted in Bi contents

Details

ISSN :
18820786 and 18820778
Volume :
6
Database :
OpenAIRE
Journal :
Applied Physics Express
Accession number :
edsair.doi...........e03ce8a41e225dcb92d7c02c09c25e4b
Full Text :
https://doi.org/10.7567/apex.6.112601