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Formation of Tetragonal InBi Clusters in InAsBi/InAs(100) Heterostructures Grown by Molecular Beam Epitaxy
- Source :
- Applied Physics Express. 6:112601
- Publication Year :
- 2013
- Publisher :
- IOP Publishing, 2013.
-
Abstract
- This work analyses the Bi incorporation in InAs1-xBix/InAs(100) epilayers grown by MBE through advanced transmission electron microscopy techniques. Samples grown from 350–400 °C resulted in Bi contents
Details
- ISSN :
- 18820786 and 18820778
- Volume :
- 6
- Database :
- OpenAIRE
- Journal :
- Applied Physics Express
- Accession number :
- edsair.doi...........e03ce8a41e225dcb92d7c02c09c25e4b
- Full Text :
- https://doi.org/10.7567/apex.6.112601