Back to Search
Start Over
Trigate 6T SRAM scaling to 0.06 µm2
- Source :
- 2009 IEEE International Electron Devices Meeting (IEDM).
- Publication Year :
- 2009
- Publisher :
- IEEE, 2009.
-
Abstract
- We present an aggressively scaled trigate device architecture with undoped channels, high-k gate dielectric, a single work function metal gate and novel BEOL processing yielding 6T SRAM bit cells as small as 0.06 µm2. This is the smallest SRAM cell demonstrated to date and represents the first time an SRAM based on a multi-gate FET (MUGFET) architecture has surpassed SRAM density scaling demonstrated with planar devices [1].
- Subjects :
- 010302 applied physics
Hardware_MEMORYSTRUCTURES
Materials science
business.industry
Gate dielectric
Electrical engineering
Hardware_PERFORMANCEANDRELIABILITY
02 engineering and technology
Dielectric
021001 nanoscience & nanotechnology
01 natural sciences
Planar
Logic gate
0103 physical sciences
Hardware_INTEGRATEDCIRCUITS
Field-effect transistor
Static random-access memory
0210 nano-technology
business
Metal gate
Scaling
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2009 IEEE International Electron Devices Meeting (IEDM)
- Accession number :
- edsair.doi...........e0058c9ddbbe5f755174dd393948f999
- Full Text :
- https://doi.org/10.1109/iedm.2009.5424249