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Electrochemical deposition of indium into oxidized and unoxidized porous silicon

Authors :
Nikita Grevtsov
E. B. Chubenko
Vitaly Bondarenko
Sergey Gavrilov
I. M. Gavrilin
Alexey Dronov
Source :
Thin Solid Films. 734:138860
Publication Year :
2021
Publisher :
Elsevier BV, 2021.

Abstract

Various cases of electrochemical deposition of indium into oxidized and unoxidized mesoporous silicon were investigated and subsequently compared. The results would suggest that both thermal and chemical oxidation of porous silicon cause the metal particles being deposited into its pores to shift deeper along the pore channels due to the latter's topmost areas being oxidized the most and therefore becoming significantly less conductive and more easily wettable by both the deposition solution and indium itself upon its subsequent thermal processing. However, oxidation becomes less effective as the thickness of the porous layer is increased due to the gradually escalating effect of reduced conductivity at the pore tips. Potentially, porous silicon layers with indium particles localized in the bottommost parts of the pore channels could be used to form germanium nanostructures inside the pores, allowing subsequent creation of Ge-Si alloys by utilizing the electrochemical liquid-liquid-solid approach.

Details

ISSN :
00406090
Volume :
734
Database :
OpenAIRE
Journal :
Thin Solid Films
Accession number :
edsair.doi...........dfe11b99a2d12f4536b2ca90b996f907