Local microscopic field effects in the plasmon dispersion relation of silicon

Considers the dielectric response matrix epsilon K,G(q, omega ) for silicon within a modified dynamic Johnson model (1974). The effect of inclusion of local microscopic fields in the dispersion of the volume plasmon of silicon is studied along the (100) direction up to the critical wavevector qc approximately=1.2 AA-1 and the results are compared with recent experimental work.