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Characteristics of Silicon Carbide Schottky Barrier Diodes and Confirmation of Power Loss Reduction Effects
- Source :
- Journal of the Japan Institute of Power Electronics. 38:65-69
- Publication Year :
- 2012
- Publisher :
- The Japan Institute of Power Electronics, 2012.
Details
- ISSN :
- 18843239 and 13488538
- Volume :
- 38
- Database :
- OpenAIRE
- Journal :
- Journal of the Japan Institute of Power Electronics
- Accession number :
- edsair.doi...........df6542a304be321ca452e9917eaa94c9