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Comparison of Defect Images and Density Between Synchrotron Section Topography and Infrared Light Scattering Microscopy in HeatāTreated Czochralski Silicon Crystals
- Source :
- Journal of The Electrochemical Society. 139:599-604
- Publication Year :
- 1992
- Publisher :
- The Electrochemical Society, 1992.
-
Abstract
- Density of crystal defects in Czochralski silicon wafers, which had been subjected to various heat treatments, are studied by two different kinds of methods, i.e. synchrotron section topography and infrared light scattering microscopy (LSM). A comparison of the results shows that both these techniques reveal the existence and density of crystal defects. The defect densities given by LSM are larger than those given by section topography, because of its capability to reveal small oxygen precipitates, which are smaller than the resolution of the topographs. It is shown that the LSM technique is a powerful tool to investigate small oxygen precipitates even in samples whose topographs show only the Pendellosung fringe pattern characteristic of a perfect crystal. It is also determined that the volume of the smallest identifiable oxygen precipitates with LSM is through comparative observations by means of transmission electron microscopy.
- Subjects :
- Silicon
Renewable Energy, Sustainability and the Environment
Scattering
business.industry
Resolution (electron density)
chemistry.chemical_element
Condensed Matter Physics
Crystallographic defect
Synchrotron
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
law.invention
Optics
chemistry
Perfect crystal
Transmission electron microscopy
law
Microscopy
Materials Chemistry
Electrochemistry
business
Subjects
Details
- ISSN :
- 19457111 and 00134651
- Volume :
- 139
- Database :
- OpenAIRE
- Journal :
- Journal of The Electrochemical Society
- Accession number :
- edsair.doi...........df5c6e386ac08e827c2a89d2a87154b1