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Investigation of Deep Levels and Residual Impurities in Sublimation-Grown SiC Substrates

Authors :
Ashraf Uddin
Hiroshi Mitsuhashi
Tsutomu Uemoto
Source :
Japanese Journal of Applied Physics. 33:L908
Publication Year :
1994
Publisher :
IOP Publishing, 1994.

Abstract

Deep levels and residual impurities in sublimation-grown n-type SiC substrates are investigated. Three electron trap centers at 0.26, 0.35 and 0.72 eV below the conduction band (CB) are observed in 4H-SiC for the first time by deep-level transient spectroscopy (DLTS). One electron trap center at 0.68 eV below the CB is also observed in n-type 6H-SiC. The trap concentration and capture cross section are estimated. The concentration of residual impurities V, Cr, Fe and Ti are found to be high. The origin of observed trap centers is discussed with respect to the residual impurities and available information.

Details

ISSN :
13474065 and 00214922
Volume :
33
Database :
OpenAIRE
Journal :
Japanese Journal of Applied Physics
Accession number :
edsair.doi...........df3aec611726c225a068493d5143c4c4
Full Text :
https://doi.org/10.1143/jjap.33.l908