Double barrier resonant tunneling device with selectively applied field in the well

Resonant tunneling of an electron through a model Al0.5Ga0.5AsAlyGa1−yAsAl0.5Ga0.5As structure is investigated numerically using a transmission matrix approach. Our model considers the electric field, α in the well region only. This model is physically realized by changing Al-concentration continuously in the well region. Transmission coefficient is obtained as a function of incident electron energy for various α values. Tunneling characteristics (transmission coefficient vs voltage) are examined as a function of α. The effect of change in temperature is discussed.