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Interfacial defects inSi1−xGex/Si quantum wells detected by deep-level transient spectroscopy
- Source :
- Physical Review B. 50:18226-18230
- Publication Year :
- 1994
- Publisher :
- American Physical Society (APS), 1994.
Details
- ISSN :
- 10953795 and 01631829
- Volume :
- 50
- Database :
- OpenAIRE
- Journal :
- Physical Review B
- Accession number :
- edsair.doi...........de8cce171cf03fee4422a5e41ebc9b95
- Full Text :
- https://doi.org/10.1103/physrevb.50.18226