Cite
Plasma-Induced Damage on the Reliability of Hf-Based High-k/Dual Metal-Gates Complementary Metal Oxide Semiconductor Technology
MLA
Tiao-Yuan Huang, et al. “Plasma-Induced Damage on the Reliability of Hf-Based High-k/Dual Metal-Gates Complementary Metal Oxide Semiconductor Technology.” International Journal of Plasma Science and Engineering, vol. 2009, Dec. 2009, pp. 1–10. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........de8c4375ca4c3a1ff0b975a1a2ce32e2&authtype=sso&custid=ns315887.
APA
Tiao-Yuan Huang, Yao-Jen Lee, Horng-Chih Lin, & Wu Te Weng. (2009). Plasma-Induced Damage on the Reliability of Hf-Based High-k/Dual Metal-Gates Complementary Metal Oxide Semiconductor Technology. International Journal of Plasma Science and Engineering, 2009, 1–10.
Chicago
Tiao-Yuan Huang, Yao-Jen Lee, Horng-Chih Lin, and Wu Te Weng. 2009. “Plasma-Induced Damage on the Reliability of Hf-Based High-k/Dual Metal-Gates Complementary Metal Oxide Semiconductor Technology.” International Journal of Plasma Science and Engineering 2009 (December): 1–10. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........de8c4375ca4c3a1ff0b975a1a2ce32e2&authtype=sso&custid=ns315887.