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Preparation of SmCo amorphous magnetic film with perpendicular magnetization

Authors :
S. Inokuchi
Z. Lee
T. Numata
Yoshifumi Sakurai
Source :
IEEE Transactions on Magnetics. 20:1335-1337
Publication Year :
1984
Publisher :
Institute of Electrical and Electronics Engineers (IEEE), 1984.

Abstract

Sm x Co 100-x ( 20 \leq x \leq 30 ) films deposited on glass substrate and Sm 37.8 Co 62.2 films deposited on silicon substrate with perpendicular magnetization have been prepared by a magnetron rf sputtering. The influence of sputtering conditions, i.e. bias voltage; substrate temperature; composition and perpendicular magnetic field on perpendicular anisotropy are reported in detail.

Subjects

Subjects :
Amorphous metal
Materials science
Condensed matter physics
Silicon
chemistry.chemical_element
Substrate (electronics)
Electronic, Optical and Magnetic Materials
Amorphous solid
Magnetization
Magnetic anisotropy
Nuclear magnetic resonance
chemistry
Sputtering
Electrical and Electronic Engineering
Thin film

Details

ISSN :
00189464
Volume :
20
Database :
OpenAIRE
Journal :
IEEE Transactions on Magnetics
Accession number :
edsair.doi...........de76fc3ab43ee9b901c07d1c1adb2854
Full Text :
https://doi.org/10.1109/tmag.1984.1063196
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