Influence of the failure effect of MEMS capacitive high g acceleration sensor on the limit range and sensitivity

With the development of MEMS capacitive accelera-tion sensor to a higher measurement range (tens of thousands of g or even hundreds of thousands of g), the failure of the device microstructure under extreme mechanical impact has become a key factor restricting its performance improvement. Existing research mainly focuses on material stress failure and device structure optimization. Aiming at the failure of micro structure under impact, a simulation model of impact response of micro structure is established in this paper. Based on the existing over stress failure and device structure optimization, the stress failure effect and short-circuit failure effect of MEMS capacitive acceleration sensor under strong impact are proposed, and the influence rules of the two failure mechanisms on the sensor limit range and sensitivity are obtained. At the same time, the optimization design of the key structural parameters of the sensor is discussed.