A computationally efficient ion implantation damage model and its application to multiple implant simulations

Authors :: S. Tian
G. Wang
M. Morris
S. Morris
B. Obradovic
A. Tasch
H. Kennel
P. Packan
C. Magee
J. Sheng
R. Lowther
J. Linn
C. Snell
Source :: SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest.
Publication Year :: 2002
Publisher :: IEEE, 2002.
Abstract: A computationally efficient ion implantation damage model based on the Kinchin-Pease formula has been developed and implemented into UT-MARLOWE Version 4.0. A speed improvement of up to an order of magnitude over previous damage models has been achieved with an accuracy equal to or better than that of the previous version of UT-MARLOWE. Based on this damage model, a simple but extremely powerful and general method for performing multiple implant simulations has been developed, and very good agreement with experimental data has been obtained.

Subjects :: Ion implantation
General method
Simple (abstract algebra)
Computer science
Experimental data
Algorithm
Order of magnitude
Biomedical engineering

Database :: OpenAIRE
Journal :: SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest
Accession number :: edsair.doi...........ddfa0a3a2fc4fd319127b70db32a69b8
Full Text :: https://doi.org/10.1109/sispad.1997.621399

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