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Structural properties and surface morphology of laser-deposited amorphous carbon and carbon nitride films
- Source :
- Surface and Coatings Technology. 125:124-128
- Publication Year :
- 2000
- Publisher :
- Elsevier BV, 2000.
-
Abstract
- A study of the relationship between structure and growth parameters for existing and candidate carbon-based protective coatings has been carried out. In particular, diamond-like carbon (DLC) and carbon nitride thin films were deposited on silicon wafers by pulsed Nd:YAG laser (wavelength 532 nm) ablation of graphite in high vacuum ( p =1.5×10 −7 Pa) and in a nitrogen atmosphere ( p =13 Pa). The composition (N/C ratio), the structural and electronic properties and the surface morphology of the deposited films were investigated as a function of laser fluence (1–12 J/cm 2 ). The highest N/C ratio 0.40 was obtained with a laser fluence of 12 J/cm 2 ; for this nitrogen concentration X-ray photoelectron spectroscopy (XPS) reveals an increase of CN bonds instead of CN bonds with respect to lower concentrations. Electron energy loss spectroscopy (EELS) and XPS show an increase of sp 2 carbon bonded sites in the DLC films deposited with lower laser fluences in agreement with the theory of the so-called sub-implantation model. EELS also reveals a gradient in the chemical nature of the films through the thickness. Atomic force microscopy analysis shows that the root-mean-squared roughness of the DLC samples is about 3 A over the laser fluence range investigated.
- Subjects :
- Materials science
Electron energy loss spectroscopy
Analytical chemistry
chemistry.chemical_element
Surfaces and Interfaces
General Chemistry
Condensed Matter Physics
Surfaces, Coatings and Films
Pulsed laser deposition
chemistry.chemical_compound
Carbon film
Amorphous carbon
chemistry
X-ray photoelectron spectroscopy
Materials Chemistry
Thin film
Carbon nitride
Carbon
Subjects
Details
- ISSN :
- 02578972
- Volume :
- 125
- Database :
- OpenAIRE
- Journal :
- Surface and Coatings Technology
- Accession number :
- edsair.doi...........dd6de932c0f1deca04ddc522da2c926e
- Full Text :
- https://doi.org/10.1016/s0257-8972(99)00591-5