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Polymeric graphitic carbon nitride (g-C3N4)-based semiconducting nanostructured materials: Synthesis methods, properties and photocatalytic applications

Authors :
Ch. Venkata Reddy
Tejraj M. Aminabhavi
Shim Jaesool
Kakarla Raghava Reddy
Nagaraj P. Shetti
Mallikarjuna N. Nadagouda
Source :
Journal of Environmental Management. 238:25-40
Publication Year :
2019
Publisher :
Elsevier BV, 2019.

Abstract

In recent years, various facile and low-cost methods have been developed for the synthesis of advanced nanostructured photocatalytic materials. These catalysts are required to mitigate the energy crisis, environmental deterioration, including water and air pollution. Among the various semiconductors explored, recently novel classes of polymeric graphitic carbon nitride (g-C3N4)-based heterogeneous photocatalysts have established much greater importance because of their unique physiochemical properties, large surface area, low price, and long service life, ease of synthesis, product scalability, controllable band gap properties, low toxicity, and high photocatalytic activity. The present comprehensive review focuses on recent achievements in a number of facile chemical synthesis methods for semiconducting polymeric carbon nitrides and their heterogeneous nanohybrids with various dopants, nanostructured metals, metal oxides, and nanocarbons, as well as the parameters influencing their physiochemical properties and photocatalytic efficiency, which are discussed with reference to various catalytic applications such as air (NOx) purification, wastewater treatment, hydrogen generation, CO2 reduction, and chemical transformation. The mechanisms for the superior photocatalytic activity of polymeric g-C3N4-based heterogeneous photocatalysts are also discussed. Finally, the challenges, prospects, and future directions for photocatalytic polymeric g-C3N4-based semiconducting materials are described.

Details

ISSN :
03014797
Volume :
238
Database :
OpenAIRE
Journal :
Journal of Environmental Management
Accession number :
edsair.doi...........dd4e8dc06fddfab10be4552b30aab570