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Interfacial charge and strain effects on lanthanum doped barium stannate thin film under ferroelectric gating

Authors :
Cui Jiameng
Jianlin Wang
Yuanxi Zhang
Haoliang Huang
Zhibo Zhao
Yalin Lu
Yuanjun Yang
Zhengping Fu
Source :
Applied Physics Letters. 117:012101
Publication Year :
2020
Publisher :
AIP Publishing, 2020.

Abstract

Interfacial charge and strain are two coupling effects in semiconductor/ferroelectric epitaxial heterostructures, which are pivotal for use in tailoring functionalities in devices. In this work, La0.04Ba0.96SnO3/0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 heterostructures with varying film thicknesses were prepared in order to understand both charge and strain's contributions to the electric-field induced resistance change. The relative resistance change to the lattice strain remains almost unchanged in those thicker films, while increases a little bit in those thinner films. This slight increase is related to the substrate constraint near the interface and follows Freund's strain relaxation model during the dynamic strain induced by the piezoelectric switch. A depletion layer model was also established to simulate the electroresistance variation from the interfacial charge effect. The depletion layer involves an equilibrium between capture and release of electrons by the acceptor-like defects near the interface region. The resistance change vs electric field evolves from a butterfly-like shape to a square-like when decreasing the film thickness, due to the joint effect of strain and interfacial polarization screening charge. This study provides an insight into understanding heteroepitaxial coupling and exploring their potential applications in oxide electronic devices.

Details

ISSN :
10773118 and 00036951
Volume :
117
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........dd2f5a6c5a545f88eae10162d483fedc