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Bias-Dependent Conduction-Induced Bimodal Weibull Distribution of the Time-Dependent Dielectric Breakdown in GaN MIS-HEMTs

Authors :
Haozhe Sun
Wen Lei
Jianguo Chen
Yufeng Jin
Maojun Wang
Source :
IEEE Transactions on Electron Devices. 69:5503-5508
Publication Year :
2022
Publisher :
Institute of Electrical and Electronics Engineers (IEEE), 2022.

Details

ISSN :
15579646 and 00189383
Volume :
69
Database :
OpenAIRE
Journal :
IEEE Transactions on Electron Devices
Accession number :
edsair.doi...........dd12919b39a9b6c6494b8413dbbbe264
Full Text :
https://doi.org/10.1109/ted.2022.3201829