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Correlation between low-frequency noise and low-temperature performance of two-dimensional electron gas FET's
- Source :
- IEEE Transactions on Electron Devices. 33:572-575
- Publication Year :
- 1986
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 1986.
-
Abstract
- We report here on low-frequency (LF) noise of GaAs/ GaAlAs TEGFET's. Present investigations show that this noise is not inherently lower in TEGFET's than in MESFET's. Moreover, the bias and frequency dependence of the noise was found to indicate that traps in GaAlAs have a fundamental influence on LF noise. A close correlation is subsequently observed between the noise level at ambient temperature and the TEGFET static and dynamic performances at low temperature (130 K).
- Subjects :
- Noise temperature
Chemistry
business.industry
Infrasound
Noise spectral density
Bandwidth (signal processing)
High-electron-mobility transistor
Electronic, Optical and Magnetic Materials
Electronic engineering
Optoelectronics
MESFET
Field-effect transistor
Electrical and Electronic Engineering
business
Fermi gas
Subjects
Details
- ISSN :
- 00189383
- Volume :
- 33
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Electron Devices
- Accession number :
- edsair.doi...........dcdf7d4a392e90f1ef19c106a9fdb303
- Full Text :
- https://doi.org/10.1109/t-ed.1986.22534