Cite
Investigation of vertical type single-electron transistor with sidewall spacer quantum dot
MLA
Byung-Gook Park, et al. “Investigation of Vertical Type Single-Electron Transistor with Sidewall Spacer Quantum Dot.” 2011 International Semiconductor Device Research Symposium (ISDRS), Dec. 2011. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........dcc12d1a585ebf9f0ec5771e163db03c&authtype=sso&custid=ns315887.
APA
Byung-Gook Park, Kwon-Chil Kang, Wandong Kim, Jung Han Lee, Kyung Wan Kim, Hyun-Woo Kim, & Joo Yun Seo. (2011). Investigation of vertical type single-electron transistor with sidewall spacer quantum dot. 2011 International Semiconductor Device Research Symposium (ISDRS).
Chicago
Byung-Gook Park, Kwon-Chil Kang, Wandong Kim, Jung Han Lee, Kyung Wan Kim, Hyun-Woo Kim, and Joo Yun Seo. 2011. “Investigation of Vertical Type Single-Electron Transistor with Sidewall Spacer Quantum Dot.” 2011 International Semiconductor Device Research Symposium (ISDRS), December. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........dcc12d1a585ebf9f0ec5771e163db03c&authtype=sso&custid=ns315887.