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Analytical current-voltage model for nanocrystalline silicon thin-film transistors
- Source :
- Applied Physics Letters. 89:193504
- Publication Year :
- 2006
- Publisher :
- AIP Publishing, 2006.
-
Abstract
- An analytical model for the drain current above threshold voltage, based on an exponential energy distribution of band tail states, has been applied to bottom-gated nanocrystalline silicon (nc-Si) thin-film transistors (TFTs). Analysis of the model shows that the slope of the exponential band tails determines the behavior of the device current-voltage characteristics. Comparison with experimental data shows that few fundamental model parameters, related to the material quality and different physical effects, can be used to describe consistently both output and transfer characteristics of nc-Si TFTs over a wide range of channel lengths.
- Subjects :
- Range (particle radiation)
Materials science
Physics and Astronomy (miscellaneous)
Silicon
business.industry
Transistor
Nanocrystalline silicon
chemistry.chemical_element
law.invention
Threshold voltage
Exponential function
chemistry
Thin-film transistor
law
Optoelectronics
business
Communication channel
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 89
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........dc9aec0ffdd2bc8c58aebc0850b73a48