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Synthesis and properties of highly mismatched II–O–VI alloys
- Source :
- IEE Proceedings - Optoelectronics. 151:452-459
- Publication Year :
- 2004
- Publisher :
- Institution of Engineering and Technology (IET), 2004.
-
Abstract
- Ternary and quaternary dilute II–VI oxides were synthesised using a highly non-equilibrium method: the combination of O ion implantation and pulsed-laser melting. CdOxTe1−x thin films have been produced with x up to 0.015 and with the energy gap reduced by 0.15 eV. Optical transitions corresponding to both the lower (E−) and upper (E+) conduction sub-bands, resulting from the anticrossing interaction between the localised O states and the extended conduction states of the matrix, are clearly observed in quaternary Cd0.6Mn0.4OxTe1−x and Zn0.88Mn0.12OxTe1−x layers. These results have important implications for the existing theoretical models of the electronic structure of the highly mismatched alloys. In Zn1−xMnxTe, where the O level lies below the conduction band edge, it was demonstrated that incorporation of a small amount of oxygen leads to the formation of a narrow, oxygen-derived band of extended states located well below the conduction band edge of the ZnMnTe matrix. The three absorption edges of this material (∼0.73, 1.83 and 2.56 eV) cover the entire solar spectrum providing a material envisioned for multiband, single-junction, high-efficiency photovoltaic devices.
- Subjects :
- Materials science
Condensed matter physics
Computer Networks and Communications
Band gap
Electronic structure
Thermal conduction
Molecular physics
Atomic and Molecular Physics, and Optics
Matrix (mathematics)
Ion implantation
Electrical and Electronic Engineering
Thin film
Ternary operation
Absorption (electromagnetic radiation)
Subjects
Details
- ISSN :
- 13597078 and 13502433
- Volume :
- 151
- Database :
- OpenAIRE
- Journal :
- IEE Proceedings - Optoelectronics
- Accession number :
- edsair.doi...........dc8d4aca8d6e070b01aa65de0c6a146b