Stacked Ge2Sb2Te5/GeTe multi-level phase-change memory with asymmetric double-heater

An symmetric double-heater structure is proposed into the traditional stacked layer phase-change memory (PCM) for the first time. It contains no barrier layer. The superior multi-level storage (MLS) is verified in this structure by numerical simulation. Temperature at the interface of two phase-change materials is greatly reduced by reasonably choosing the heater radius, which is beneficial for less atomic interdiffusion at the interface, thus more stable MLS. Device performance can be optimized through material thickness trade-off. Hence, this structure is a candidate utility for the future MLS device