Low-Frequency Noise Characterization of Ultra-Low Equivalent-Oxide-Thickness Thulium Silicate Interfacial Layer nMOSFETs

MLA

Maryam Olyaei, et al. “Low-Frequency Noise Characterization of Ultra-Low Equivalent-Oxide-Thickness Thulium Silicate Interfacial Layer NMOSFETs.” IEEE Electron Device Letters, vol. 36, Dec. 2015, pp. 1355–58. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........dc53c8f40a066f5a8dd8b96781fc9d74&authtype=sso&custid=ns315887.

APA

Maryam Olyaei, Mikael Östling, Eugenio Dentoni Litta, Per-Erik Hellström, & Bengt Gunnar Malm. (2015). Low-Frequency Noise Characterization of Ultra-Low Equivalent-Oxide-Thickness Thulium Silicate Interfacial Layer nMOSFETs. IEEE Electron Device Letters, 36, 1355–1358.

Chicago

Maryam Olyaei, Mikael Östling, Eugenio Dentoni Litta, Per-Erik Hellström, and Bengt Gunnar Malm. 2015. “Low-Frequency Noise Characterization of Ultra-Low Equivalent-Oxide-Thickness Thulium Silicate Interfacial Layer NMOSFETs.” IEEE Electron Device Letters 36 (December): 1355–58. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........dc53c8f40a066f5a8dd8b96781fc9d74&authtype=sso&custid=ns315887.