Influence of DUV excimer laser radiation (λ = 193 nm) on CMOS devices

The degree of radiation damage in PMOS and NMOS transistors fabricated in astandard N-well process due to deep ultraviolet (DUV) ArF excimer laser (193 nm) irradiation was determined by measurement of the subthreshold characteristics. Depending on the pulse energy density and the dose different shifts in the drain and in the leakage current occur. All induced radiation damage was annealed after a 450°C temperature step in N2 and 10% H2 for 20 min. The intensities necessary to induce significant radiation damages are much greater than those required for DUV lithography.