High-Efficiency LEDs Based on GaInAsSb Solid Solutions with Reduced Arsenic Content in the Active Region

Light-emitting diodes (LEDs) with the active region based on Ga1− xInxAsySb1−y solid solutions are obtained on GaSb substrates. The active region has a composition close to the domain of immiscibility (x = 0.24) and a reduced arsenic content (y = 0.16). The diode structures exhibit a high density of misfit dislocations. Nevertheless, the room-temperature external quantum yield reaches a record-high level of 1.2% in the spectral band with a maximum wavelength of 2.42 μm. The maximum output radiation pulse power reaches 3.3 mW at a current of 600 mA. The emission is predominantly due to the interband transitions, which is evidence of a high degree of stoichiometry of the active region.