The molecular beam epitaxy growth of InGaAsSb/AlGaAsSb quantum well on GaAs substrate with emission wavelength of∼ 2μm

InGaAsSb layers and InGaAsSb/AlGaAsSb quantum wells nearly lattice-matched to GaSb were grown by solid-source molecular beam epitaxy on GaAs substrates. As2 and Sb2 sources produce by valved crackers were used for the growth of quaternary InGaAsSb layer and InGaAsSb/AlGaAsSb quantum well structure, which greatly facilitated the lattice-matched to GaSb, as characterized by X-ray diffraction. In order to adjust the composition of indium in InGaAsSb, the indium flux was changed by different indium source temperature under the condition of fixed growth temperature and gallium flux, and InGaAsSb with emission wavelength of 2018 nm at room temperature was grown. By using this growth parameter, the InGaAsSb/AlGaAsSb quantum well structure with 20 nm well layer and emission wavelength of 1966 nm at room temperature was then grown. X-ray diffraction and photoluminescence results indicate that ∼2 μm InGaAsSb/AlGaAsSb quantum well structure on GaAs with better crystal and optical properties had been prepared successfully.