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Determination of built-in field by applying fast Fourier transform to the photoreflectance of surface-intrinsic n+-type doped GaAs
- Source :
- Applied Physics Letters. 74:475-477
- Publication Year :
- 1999
- Publisher :
- AIP Publishing, 1999.
-
Abstract
- Photoreflectance spectroscopy of surface-intrinsic n+-doped (s-i-n+) GaAs has been measured at various power densities (Ppu) of a pump beam. Many Franz–Keldysh oscillations (FKOs) were observed above the band-gap energy, which will enable the electric-field strength (F) to be determined from the periods of the FKOs. Field F thus obtained is subject to photovoltaic effects. In order to reduce the photovoltaic effects from the pump beam, Ppu was kept below 10 μW/cm2 in the previous experiments. Here, we demonstrate that the built-in field can be determined at a larger Ppu by using fast Fourier transform techniques.
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 74
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........db6515400432983b9b4cd40e41b3e055