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Fabrication and efficient photocatalytic dye degradation over Z-scheme-based BiVO4/CdS heterojunction under visible-light irradiation
- Source :
- Journal of Materials Science: Materials in Electronics. 31:15742-15750
- Publication Year :
- 2020
- Publisher :
- Springer Science and Business Media LLC, 2020.
-
Abstract
- Novel Z-scheme-based BiVO4/CdS photocatalysts with efficient charge separation were prepared by simple in situ hydrothermal method. The compact structure of the CdS nanorod and BiVO4 nanosheet has formed a Z-scheme heterojunction. The as-prepared BiVO4/CdS composites were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, Raman spectroscopy, diffuse reflection spectroscopy, photoluminescence and photocurrent techniques. It was found that the BiVO4/CdS composites had the light-absorbing range and could efficiently degrade malachite green dye under visible-light irradiation. In this report, the result of the best degrading sample could achieve 92% in 30 min under visible light, respectively. BiVO4/CdS composites perform photocatalytic efficiently due to the Z-scheme. Furthermore, the Z-scheme-based BiVO4/CdS composites leaded to a major oxidation site at BiVO4, which successfully avoided photoetching of CdS during photocatalysis. Especially, the BiVO4/CdS system exhibits great photogenerated electron–hole pairs separation capabilities and high redox capabilities. This unique method of synthesizing Z-scheme-based BiVO4/CdS heterojunction has ability to reduce the cost and promote photocatalytic in visible-light range simultaneously.
- Subjects :
- 010302 applied physics
Photocurrent
Materials science
Photoluminescence
business.industry
Heterojunction
Condensed Matter Physics
01 natural sciences
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
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0103 physical sciences
Photocatalysis
symbols
Optoelectronics
Nanorod
Electrical and Electronic Engineering
Raman spectroscopy
business
Visible spectrum
Nanosheet
Subjects
Details
- ISSN :
- 1573482X and 09574522
- Volume :
- 31
- Database :
- OpenAIRE
- Journal :
- Journal of Materials Science: Materials in Electronics
- Accession number :
- edsair.doi...........db47ee9e48d5833a3640845dded072a0