Chlorinated silicon carbide CVD revisited for polycrystalline bulk growth

Silicon carbide is interesting for high power, high temperature and high frequency applications but its development is limited by the low quality and high cost of single-crystalline wafers. The transfer by wafer-bonding of single-crystalline SiC thin films to a polycrystalline SiC support is an attractive way for lowering the cost. This transfer requires high quality polycrystalline substrates fabricated with high growth rate, controlled morphology (columnar, dense, well-oriented layers), and very low surface roughness (RMS