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Strain compensated InAsP/InP/InGaP multiple quantum well for 1.5 μm wavelength

Authors :
Paul K. L. Yu
X. S. Jiang
Source :
Applied Physics Letters. 65:2536-2538
Publication Year :
1994
Publisher :
AIP Publishing, 1994.

Abstract

We report metalorganic vapor phase epitaxy growth of InAs0.66P0.34/InP/In0.74Ga0.26P strain compensated multiple quantum wells (MQWs) at 1.5 μm wavelength. A composite InP/InGaP/InP barrier structure is used to tune the net strain of the MQWs. Compared with InAs0.66P0.34/InP strained MQWs grown under similar conditions, the InAs0.66P0.34/InP/In0.74Ga0.26P strain compensated MQWs show improvement in crystalline and optical quality.

Subjects

Subjects :
Wavelength
Optical modulator
Materials science
Physics and Astronomy (miscellaneous)
Strain (chemistry)
business.industry
Multiple quantum
Vapor phase
Infrared spectroscopy
Optoelectronics
Epitaxy
business
Quantum well

Details

ISSN :
10773118 and 00036951
Volume :
65
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........da8ec4f641bdc2fa6ffefecc04d518c3
Full Text :
https://doi.org/10.1063/1.112627
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