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Manifestation of A(+) centers in the luminescence of two-dimensional GaAs/AlGaAs structures
- Source :
- Semiconductors. 36:929-931
- Publication Year :
- 2002
- Publisher :
- Pleiades Publishing Ltd, 2002.
-
Abstract
- Photoluminescence of GaAs/AlGaAs multiple-quantum-well structures incorporating positively charged beryllium-impurity shallow-level acceptors (the so-called A(+) centers) was investigated. A novel luminescence line, which originated from radiative recombination of free electrons with A(+) centers, was observed. It was shown that its spectral position is determined uniquely by the binding energy of A(+) centers. It was also ascertained that the binding energy of A(+) centers increases with a decrease in the quantum-well width when the latter is comparable to the radius of A(+) centers.
- Subjects :
- Free electron model
Photoluminescence
Condensed Matter::Other
Chemistry
Binding energy
Radius
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Condensed Matter Physics
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
Condensed Matter::Materials Science
Spontaneous emission
Atomic physics
Luminescence
Gaas algaas
Line (formation)
Subjects
Details
- ISSN :
- 10906479 and 10637826
- Volume :
- 36
- Database :
- OpenAIRE
- Journal :
- Semiconductors
- Accession number :
- edsair.doi...........da0a25f65d9c7c69eef7c31a69e7b051