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Ion-sensitive field effect transistor on hydrogenated diamond
- Source :
- Diamond and Related Materials. 15:673-677
- Publication Year :
- 2006
- Publisher :
- Elsevier BV, 2006.
-
Abstract
- Ion-sensitive field effect transistors (ISFETs) produced on hydrogen-terminated homoepitaxial intrinsic diamond films exhibit pronounced sensitivity to pH of aqueous electrolyte solutions. Gating of the transistor channels is realized by immersing the ISFET into pH buffer solution which is in contact with the platinum gate electrode. Conductivity through the ISFET channel is studied as a function of bias voltage on the gate electrode for pH 2–12. The conductivity decreases as pH increases. The ISFET response follows a linear trend of − 56 mV/pH. The sensing mechanism is discussed in terms of transfer doping, Nernst equation, and electrochemical properties of diamond surfaces.
- Subjects :
- Synthetic diamond
Mechanical Engineering
Material properties of diamond
Analytical chemistry
Diamond
Biasing
General Chemistry
Buffer solution
engineering.material
Electronic, Optical and Magnetic Materials
law.invention
chemistry.chemical_compound
symbols.namesake
chemistry
law
Materials Chemistry
engineering
symbols
Field-effect transistor
Nernst equation
Electrical and Electronic Engineering
ISFET
Subjects
Details
- ISSN :
- 09259635
- Volume :
- 15
- Database :
- OpenAIRE
- Journal :
- Diamond and Related Materials
- Accession number :
- edsair.doi...........d9a7190a2740ad7d5c96f7748df704c7