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Resistive Memory Sensing Using Delta-Sigma Modulation
- Source :
- 2009 IEEE Workshop on Microelectronics and Electron Devices.
- Publication Year :
- 2009
- Publisher :
- IEEE, 2009.
-
Abstract
- The design of four resistive memory sensing circuit topologies employing delta-sigma (DeltaSigma) modulation are presented. Operation of the designs and a comparison between simulations and experimentation is given. The designs were fabricated in a 500 nm CMOS process. Measured results indicate that the resistive values ranging from a chosen reference resistance to several hundred kOmega can be sensed reliably.
Details
- Database :
- OpenAIRE
- Journal :
- 2009 IEEE Workshop on Microelectronics and Electron Devices
- Accession number :
- edsair.doi...........d99f6c8274b3f5d544ca22c0b0f4ef5d
- Full Text :
- https://doi.org/10.1109/wmed.2009.4816149