Improved ferroelectricity in Hf0.5Zr0.5O2 by inserting an upper HfOxNy interfacial layer

In this study, the influence of the HfOxNy interfacial layer (IL), interposed between the atomic layer deposited ferroelectric (FE) Hf0.5Zr0.5O2 thin film and TiN top electrode, on the FE properties of such a film was examined. The HfOxNy IL decreased the relative proportion of the non-FE monoclinic phase, possibly due to the N-doping effect. Furthermore, the oxidation of the TiN top electrode was also suppressed by the sacrificial oxidation of the HfOxNy IL during the rapid thermal process. As a result, the double remanent polarization of a Hf0.5Zr0.5O2 thin film could be enhanced from 40.2 to 48.2 μC/cm2 by the positive-up-negative-down test, and its degradation by fatigue during the endurance test can also be decreased. This result demonstrates the significance of interfacial engineering to optimize the FE properties of Hf0.5Zr0.5O2 films.