Back to Search Start Over

Influence of W via on the mechanism of electromigration failure in Al–0.5 Cu interconnects

Authors :
T. A. Rost
H. A. Le
N. C. Tso
Choong-Un Kim
Source :
Applied Physics Letters. 72:2814-2816
Publication Year :
1998
Publisher :
AIP Publishing, 1998.

Abstract

This letter reports the effects of via current density on electromigration (EM) failure in Al–0.5 Cu conductors. Two-level metallization structures, differing in the number of feeding vias (1, 6, and 15), were made with the same pattern of Al lines at two levels to allow simultaneous EM testing of upper- and lower-level lines. It was established that the lower-level lines were more susceptible to the impact of the via, resulting in a failure by the formation of a local void beneath a via and a strong dependence of EM lifetime on the via current density. The results led to a phenomenological equation that incorporates via structure into failure kinetics.

Details

ISSN :
10773118 and 00036951
Volume :
72
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........d947a32bd8e633d24c7f614e1219d552
Full Text :
https://doi.org/10.1063/1.121467